complementary silicon plastic power transistors specifically designed for power audio output, or high power drivers in audio amplifiers. ? dc current gain specified up to 8.0 amperes at temperature ? all on characteristics at temperature ? high soa: 20 a, 18 v, 100 ms ? to247ae package ???????????????????? ???????????????????? maximum ratings ???????????? ???????????? rating ??? ??? symbol ????? ????? mjw21191 mjw21192 ??? ??? unit ???????????? ???????????? collectoremitter voltage ??? ??? v ceo ????? ????? 150 ??? ??? vdc ???????????? ???????????? collectorbase voltage ??? ??? v cb ????? ????? 150 ??? ??? vdc ???????????? ???????????? emitterbase voltage ??? ??? v eb ????? ????? 5.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak ??? ? ? ? ??? i c ????? ? ??? ? ????? 8.0 16 ??? ? ? ? ??? adc ???????????? base current ??? i b ????? 2.0 ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ??? p d ????? ? ??? ? ????? 125 0.65 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ??? ? ? ? ??? t j , t stg ????? ? ??? ? ????? 65 to +150 ??? ? ? ? ??? c ???????????????????? ???????????????????? thermal characteristics ???????????? characteristic ??? symbol ????? max ??? unit ???????????? ???????????? thermal resistance, junction to case ??? ??? r q jc ????? ????? 1.0 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ??? ??? r q ja ????? ????? 50 ??? ??? c/w 1.0 figure 1. typical capacitance @ 25 c v r , reverse voltage (v) 1.0 10 100 1000 100 1000 10 c, capacitance (pf) npn pnp on semiconductor ? semiconductor components industries, llc, 2001 may, 2001 rev. 1 1 publication order number: mjw21192/d mjw21192 mjw21191 8.0 amperes power transistors complementary silicon 150 volts 125 watts npn pnp to247 case 340k style 3 2 1 3 marking diagram mjw 2119x llyww mjw2119x = device code x = 1 or 2 ll = location code y = year ww = work week 1 base 2 collector 3 emitter
mjw21192 mjw21191 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 150 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 250 vdc, i e = 0) ????? ? ??? ? ????? i ces ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 10 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 4.0 adc, v ce = 2.0 vdc) (i c = 8.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 15 5.0 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e 100 ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 4.0 adc, i b = 0.4 adc) (i c = 8.0 adc, i b = 1.6 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.0 2.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 4.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gain e bandwidth product (2) (i c = 1.0 adc, v ce = 10 vdc, f test = 1.0 mhz) ????? ????? f t ??? ??? 4.0 ???? ???? e ??? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 2.0%. (2) f t = ? h fe ?? f test . z q jc(t) = r(t) r q jc r q jc = 1.65 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 figure 2. thermal response t, time (s) transient thermal resistance (normalized) 1.0 0.1 d = 0.5 0.00001 0.0001 0.001 0.01 0.1 1.0 10 0.2 0.05 0.02 0.01 100 1000 0.01 0.1 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. the data of figures 3 and 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 2. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjw21192 mjw21191 http://onsemi.com 3 figure 3. npn e mjw21192 safe operating area figure 4. pnp e mjw21191 safe operating area npn e mjw21192 pnp e mjw21191 100 ms 10 ms 250 ms 100 1.0 v ce , collector-emitter voltage (volts) 10 i c , collector current (amps) 1000 10 1.0 0.1 100 250ms 100 ms 10ms 100 1.0 v ce , collector-emitter voltage (volts) 10 i c , collector current (amps) 10 1000 1.0 100 0.1 typical characteristics figure 5. npn e mjw21192 v ce = 2.0 v dc current gain figure 6. pnp e mjw21191 v ce = 2.0 v dc current gain i c , collector current (amps) h 25 c 50 c 100 c 1000 0.01 1.0 100 100 10 1.0 0.1 10 , dc current gain fe 25 c 50 c 100 c 1000 0.01 i c , collector current (amps) 1.0 h fe , dc current gain 100 100 10 1.0 0.1 10 npn e mjw21192 pnp e mjw21191
mjw21192 mjw21191 http://onsemi.com 4 i c , collector current (amps) figure 7. npn e mjw21192 v ce = 5.0 v dc current gain figure 8. pnp e mjw21191 v ce = 5.0 v dc current gain 0.1 i c , collector current (amps) 1.0 0.1 0.01 v, voltage (volts) npn e mjw21192 pnp e mjw21191 v, voltage (volts) figure 9. npn e mjw21192 v ce(sat) i c /i b = 5.0 figure 10. pnp e mjw21191 v ce(sat) i c /i b = 5.0 10 1.0 0.1 i c , collector current (amps) 1.0 0.1 0.01 figure 11. npn e mjw21192 v ce(sat) i c /i b = 10 figure 12. pnp e mjw21191 v ce(sat) i c /i b = 10 10 1.0 25 c 100 c i c , collector current (amps) 1.0 0.1 0.01 10 0.1 1.0 25 c 100 c v, voltage (volts) 0.1 i c , collector current (amps) 10 1.0 0.01 10 1.0 v, voltage (volts) 25 c 100 c 25 c 100 c i c , collector current (amps) h 25 c 50 c 100 c 1000 0.01 1.0 100 100 10 1.0 0.1 10 , dc current gain fe h , dc current gain fe 25 c 50 c 100 c 1000 0.01 1.0 100 100 10 1.0 0.1 10 0.1 space
mjw21192 mjw21191 http://onsemi.com 5 i c , collector current (amps) figure 13. npn e mjw21192 v ce = 2.0 v v be ( on ) curve figure 14. pnp e mjw21191 v ce = 2.0 v v be ( on ) curve npn e mjw21192 pnp e mjw21191 10 1.0 0.1 v, voltage (volts) 10 0.001 1.0 25 c 100 c 50 c 0.01 0.1 i c , collector current (amps) 10 1.0 0.1 v, voltage (volts) 10 0.001 1.0 25 c 100 c 50 c 0.01 0.1
mjw21192 mjw21191 http://onsemi.com 6 notes
mjw21192 mjw21191 http://onsemi.com 7 notes
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